World Library  

QR link for Journal of Applied Physics : Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy
Add to Book Shelf
Flag as Inappropriate
Email this Book

Journal of Applied Physics : Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy

By Vas. P. Kunets, T. Al. Morgan, Yu. I. Mazur, V. G. Dorogan, P. M. Lytvyn et al

Click here to view

Book Id: WPLBN0002169389
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 19 November 2008

Title: Journal of Applied Physics : Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy  
Author: Vas. P. Kunets, T. Al. Morgan, Yu. I. Mazur, V. G. Dorogan, P. M. Lytvyn et al
Volume: Issue : November 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection, Journal of Applied Physics Collection
Historic
Publication Date:
Publisher: American Institute of Physics

Citation

APA MLA Chicago

Kunets, T. Al. Morgan, Yu. I. Mazur, V. G. Dorogan, P. M. Lytvyn Et A, V. P. (n.d.). Journal of Applied Physics : Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy. Retrieved from http://community.ebooklibrary.org/


Description
Description: Remotely doped In0.35Ga0.65As layers of different coverages 6, 9, 11, and 13 ML were grown by molecular beam epitaxy on (100) GaAs. Quantum dot (QD) nucleation was observed in situ by reflection high-energy electron diffraction at 8 ML growth of In0.35Ga0.65As, while for 6 ML, only two-dimensional (2D) growth was observed. Atomic force microscopy, low temperature photoluminescence, and Hall effect measurements confirmed this transition from 2D to three-dimensional growth. Low-frequency noise studies have been performed to probe defects in such heterostructures throughout the transition from a highly strained quantum well to QDs. Results were compared to a bulk n-type GaAs reference sample. We revealed three main defects in GaAs with activation energies of 0.8, 0.54, and 0.35 eV. These defects with the same activation energies were found in all samples. However, structures containing In0.35Ga0.65As QDs show an additional peak at low temperatures due to the presence of defects which are not observed for reference GaAs and quantum well samples. Detailed analysis shows that for 9 and 11 ML In0.35Ga0.65As QD samples this peak corresponds to the well known M1 defect in GaAs with an activation energy of 0.18 eV, while for a coverage of 13 ML the defect was found to have an activation energy of 0.12 eV. All defects were characterized quantitatively in terms of their activation energy, capture cross section, and density. These studies indicate that noise spectroscopy is a very sensitive tool for electronic material characterization on the nanoscale.

 

Click To View

Additional Books


  • The Journal of Chemical Physics : First-... Volume Issue : November 2008 (by )
  • Applied Physics Letters : Effect of visc... Volume Issue : December 2008 (by )
  • Biblioteca Hispanica : Bachelor's Guide ... (by )
  • The Journal of Chemical Physics : The CC... Volume Issue : November 2008 (by )
  • Physics of Fluids : Chaotic motions of a... Volume Issue : September 2008 (by )
  • Chaos : Detecting topological features o... Volume Issue : December 2008 (by )
  • Journal of Applied Physics : Single domi... Volume Issue : November 2008 (by )
  • Biblioteca Hispanica : Programme Course ... (by )
  • Journal of Applied Physics : Observation... Volume Issue : November 2008 (by )
  • Journal of Mathematical Physics : The O(... Volume Issue : October 2008 (by )
  • Biblioteca Hispanica : Natural and Moral... (by )
  • Chaos : On the bifurcation of species Volume Issue : November 2008 (by )
Scroll Left
Scroll Right

 



Copyright © World Library Foundation. All rights reserved. eBooks from World eBook Library are sponsored by the World Library Foundation,
a 501c(4) Member's Support Non-Profit Organization, and is NOT affiliated with any governmental agency or department.