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Journal of Applied Physics : On PbTiO3-(111)-Pt interfacial layers and their x-ray photoelectron spectroscopy signature

By S. Habouti, C-H. Solterbeck, M. Es-Souni, and V. Zaporojtchenko

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Book Id: WPLBN0002169418
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 17 November 2008

Title: Journal of Applied Physics : On PbTiO3-(111)-Pt interfacial layers and their x-ray photoelectron spectroscopy signature  
Author: S. Habouti, C-H. Solterbeck, M. Es-Souni, and V. Zaporojtchenko
Volume: Issue : November 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection (Contemporary), Journal of Applied Physics Collection
Historic
Publication Date:
Publisher: American Institute of Physics

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C-H. Solterbeck, M. Es-Souni, And V. Zaporojtchenk, S. H. (n.d.). Journal of Applied Physics : On PbTiO3-(111)-Pt interfacial layers and their x-ray photoelectron spectroscopy signature. Retrieved from http://community.ebooklibrary.org/


Description
Description: In this work emphasis is placed on the investigation of interfacial layers between sol-gel processed PbTiO3 (PTO) thin films and (111)Pt terminated silicon substrates. The methods used are x-ray diffraction, x-ray photoelectron spectroscopy (XPS) combined with depth profiling, and atomic force microscopy (AFM). In order to avoid artifacts related to ion bombardment, e.g., reduction of Pb ions and preferential sputtering, gentle argon ion bombardment conditions were first derived. AFM investigations of native and ion bombarded films at different stages of depth profiling show that the films are homogenously sputtered, whereby the film roughness remains practically unchanged in the course of sputtering. An annealing treatment at 550 °C under reducing atmosphere was used to provoke the formation of an interfacial intermetallic (111)PtxPb phase, which is shown to coexist with an amorphous oxide film. This could allow us to establish the XPS signature of the intermetallic phase. A negative shift of the Pt (4f) binding energy and a large full width at half maximum of the Pb (4f) peak are the attributes of this signature. PTO-film annealing in air at temperatures between 350 and 600 °C leads to the formation of the perovskite phase, starting at 500 °C, directly from the amorphous phase. Based on its derived XPS signature it is shown that the intermetallic phase still exists at the interface with variable thickness depending on the annealing temperature. The pronounced (111) texture of the PTO-crystallized films is thought to be the direct consequence of this intermetallic template layer. It is also shown that the outermost surface of the PTO film is enriched with PbO as a result of segregation phenomena.

 

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